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| 标题 | First Principle Study Of Si And Ge Band Structure For Utb MOSFETs Applications |
| 网址 | |
| DOI | 10.1109/isdrs.2005.1596134 |
| 其他 | 期刊：2005 International Semiconductor Device Research Symposium 作者：T. Low;Y.P. Feng; Li M.F.;G. Samudra;Y.C. Yeo;P. Bai;L. Chan; Kwong D.L. 出版日期：2005 |
| 求助人 | 在你笑里沉沦 在 2023-06-28 13:24:53 发布，悬赏 |
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